وابستگی دمایی مشخصه‌های الکتریکی دیود سد شاتکی Al/p-Si

صادق زاده, محمدعلی; توکلی, عاطفه

وابستگی دمایی مشخصه‌های الکتریکی دیود سد شاتکی Al/p-Si

نوع مقاله : مقاله پژوهشی

نویسندگان

¹ دانشگاه یزد- دانشکده فیزیک- عضو هیات علمی

² فارغ التحصیل ارشد دانشکده فیزیک- دانشگاه یزد

چکیده

اتصالات فلز – نیمرسانای شاتکی بعنوان بخش پیچیده قطعات نیمرسانا و صنعت الکترونیک مورد توجه بوده‌اند. در این مقاله دیودهای شاتکی Al/p-Si به روش لایه نشانی تبخیر حرارتی بر بستر سیلیکان نوع پذیرنده ساخته و بر اساس نظریه گسیل گرما یونی مشخصه یابی شدند. پارامترهای فاکتور ایده‌آل، ارتفاع سد شاتکی و جریان اشباع معکوس، با انداز‌ه‌‌گیری منحنی جریان- ولتاژ (I-V) دیودهای بازپخت شده در محدوده دمایی °C 100-350 بدست آمدند. تأثیر بازپخت بر پارامترهای دیود سد شاتکی بررسی و مشخص شد که دمای بهینه بازپخت °C 250 می‌باشد. سپس مشخصه جریان- ولتاژ دیودهای ساخته شده در گستره دمایی 300-15 کلوین اندازه‌گیری و فاکتور ایده‌آل، ارتفاع سد شاتکی و جریان اشباع معکوس تعیین گردید. مشخص شد با کاهش دمای دیود، ارتفاع سد شاتکی و جریان اشباع معکوس کاهش، اما فاکتور ایده‌آل افزایش می‌یابد. در خاتمه ارتفاع سد شاتکی و ثابت ریچاردسون دیود مذکور با در نظر گرفتن توزیع گاوسی ارتفاع سد محاسبه شدند. مقدار بزرگ و غیر منتظره فاکتور ایده‌آل را می‌توان با پراکندگی حامل‌ها از اتمهای Al نفوذ یافته به نیمرسانا در نزدیکی میانگاه Al/Si توجیه کرد.

کلیدواژه‌ها

موضوعات

افزاره های اپتوالکترونیک و فتونیک

عنوان مقاله [English]

Temperature Dependence of Electrical Characteristics of Al/p-Si Shottky Barrier Diodes

نویسندگان [English]

Mohammad Ali Sadeghzadeh ¹
AtefehTavakoli Tavakoli ²

¹ Yazd University- Physics Department - Academic Staff

² MSc. Graduated - Physics Department - Yazd University

چکیده [English]

Metal-semiconductor Schottky junctions as intricate part of semiconductor devices have been interested in the electronics industry. In this paper, Al/p-Si Schottky diodes which fabricated onto acceptor type silicon substrate using thermal evaporation layer deposition, were characterized in terms of thermionic emission theory. Ideality factor, reverse saturation current, Schottky barrier height, of the annealed diodes at the 150-350 °C temperature range, have been determined by measuring the current –voltage (I-V) characteristics. The effects of annealing process on the Schottky parameters have been inspected and it was found that the optimum annealing temperature was 250 °C. Then current-voltage characteristics of the processed diodes have been measured at 15 -300 °K sample temperature. Ideality factor, Schottky barrier height, and reverse saturation current and their temperature dependence have been determined. It was revealed that as the sample temperature decreases, the barrier height decreases while ideality factor increases. Finally, the Schottky barrier and Richardson coefficient have been determined taking into account the Gaussian distribution of barrier height. The unexpected high value of ideality factor can be justified in terms of ionized impurity scattering of carriers from diffused Al atoms to semiconductor near the Al/Si interface.

کلیدواژه‌ها [English]

Schottky Diode "
" Schootky Barrier "
" Al/p-Si Diode "
" Electrical Characterization "
" Metal-semiconductor

مراجع

[ 1 ] B.L. Sharma, “Metal-semiconductor Schottky barrier junctions and their applications,” Plenum Pres, 2013.

[ 2 ] S.M. Sze, and K.K. Ng, “Physics of semiconductor devices,” Wiley, Hoboken, NJ, 2007.

[ 3 ] M.G. Arashti and M.A. Sadeghzadeh, “Low-temperature electrical characterization of the Ti–Si(100) interface at the p-Si/SiGe/Si–Ti structure using Hall measurement analysis,” Physica Scripta,vol. 88, 02570, 2013.

[ 4 ] M.K. Hudait, and S.B. Krupanidhi, “ Effects of thin oxide in metal-semiconductor and metal-inslator-semiconductor epi-GaAs Schottkey diodes,” Solid-State Electronics, vol. 44, pp. 1089-1097, 2000.

[ 5 ] E. Guo, Z. Zeng, Y. Zhang, X. Long, H. Zhou, and X. Wang, “The effect of annealing temprature on the electronic parameters and transport mechanism of Pt/n-type Ge Schottky diodes,” Microelectronic Reliability, vol. 62, pp. 62-69, 2016.

[ 6 ] A. Chawanda, C. Nyamhere, F. Auret, W. Mtangi, M. Diale, and J. Nel, “Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100),” Journal of Alloys and Compounds, vol. 492, pp. 649-655, 2010.

[ 7 ] H. Doğan, N. Yıldırım, and A. Turut, “Thermally annealed Ni/n-GaAs (Si)/In Schottky barrier diodes,” Microelectronic Engineering, vol. 85, pp. 658-655, 2008.

[8] G. Güler, Ş. Karataş, and Ö. Bakkaloglu, “Annealing temperatureon effect on electrical characteristics of Co/p-type Si Schottky barrier diodes,” Physica B: Condensed Matter, vol. 404, pp. 1494-1497, 2009.

[ 9 ] Ç. Nuhoğlu and Y. Gülen, “The effect of high temperature annealing on Schottky diode characteristics of Au/n-Si contacts,” Vacuum, vol. 84, pp. 812-816, 2010.

[ 10 ] İ. Dökme, M.Ş. Altindal, and M. M. Bülbül, “The barrier height inhomogenity in Al/p-Si Schottky barrier diodes with native insulator layer,” Applied Surface Science, vol. 252, pp. 7749-7756, 2006.

[ 11 ] O. Pakma, N. Serin, T. Serin, and Ş. Altındal, “On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/Tio2/p-Si (MIS) structures,” Physica B: Condensed Matter, vol. 406, pp. 771-776, 2011.

[ 12 ] Ö. Faruk Yüksel, “Temperature dependence of current-voltage characteristis of Al/p-Si (100) Schottky barrier diodes,” Physica B: Condesed Matter, vol. 404, pp. 1993-1997, 2002.

[ 13 ] J.Y. Wang, A. Zalar, Y.H. Zhao, E.J. Mittemeijer, “Determination of interdiffusion coficient for Si/Al multilayers by Auger electron spectroscopial sputer depth profiling,” Thin Solid Films, vol. 433, pp. 92-96, 2003.

[ 41 ] A. Sariyidiz, Ö. Vural, M. Evecen, and Ş. Altındal, “Single Gaussian distributionof barrier height in Al/PS-ZnPc/P-Si type Schottky barierr diode in temperature range of 120-320K,” J. Matter Sci: Mater Electron, vol. 25, pp. 4391-4397, 2014.

[ 15 ] R. T. Tung, “Electron transport at metal-semiconductor interfaces: General theory,” Phys. Rev. B, vol. 45, pp. 13509-13523, 1992.

[ 61 ] R. Kumar and S. Chand, “The effects of temperature on electrical transport properties of Al/Si Schottky diode,” Proceeding of International Conference on Recent Trends in Applied Physics & Material Science: RA, pp. 487- 488, 2013.

[ 71 ] S. Chand, and J. Kumar, “Current-Voltage charactristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range,” Semicond. Sci. Technol. vol. 10, pp. 1680-1688, 1995.

[ 81 ] S. Acar, S. Karadeniz, N. Tuğluoğlu, A. Selçuk, and M. Kasap, “Gaussian distribution of inhomogeneous barrier height in Ag/P-Si (100) diodes,” Applied Surface Science, vol. 233, pp. 373-381, 2004.

[ 91 ] Ş. Altındal, H. Kanbur, A. Tataroğlu, and M. Bülbül, “The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer,” Physica B: Condensed Matter, vol. 399, pp. 146-154, 2007.

[ 20 ] Ş. Altındal, H. Kanbur, D.E. Yildiz, and M. Parlak, “Current conduction mechanism in Al/P-Si Schottky barrier diodes with native insulator layer at low temperatures,” Appl. Surf. Sci. vol. 253, pp. 5056-5061, 2007.

[ 21 ] A. Gümüş, A. Türüt, and N. Yalçin, “Temperrature dependence of barrier charactristics of CrNiCo alloy Schottky contacts on n-type molecolar beam epitaxy GaAs,” J. Appl. Phys. vol. 91, pp. 245-250, 2002.

[ 22 ] M.A. Sadeghzadeh, S.M. Azizi, “Interfacial Al segregation limiting electron mobility at inverted interface of AlGaAs/GaAs quantum well,” Semicond. Sci. Technol. vol. 27, 105009, (6pages), 2012.