طراحی تقویت‌کننده فراپهن‌باند کم‌نویز از نوع تمام تفاضلی گیت‌مشترک

صالحی, ناصر; بکرانی, مهدی; زیانی, هادی; تسخیری, محمدمهدی

طراحی تقویت‌کننده فراپهن‌باند کم‌نویز از نوع تمام تفاضلی گیت‌مشترک

نوع مقاله : مقاله پژوهشی

نویسندگان

¹ دانشگاه صنعتی قم، دانشجوی کارشناسی ارشد

² دانشگاه صنعتی قم، هیات علمی، دکترای برق الکترونیک

³ دانشکده برق و کامپیوتر، دانشگاه صنعتی قم

چکیده

با افزایش تعداد استانداردهای مخابراتی، نیاز به فرستنده - گیرنده های چند استانداردی افزایش یافته است. در این مقاله، هدف طراحی و شبیه سازی یک تقویت کننده کم‌ نویز است که ضمن دارا بودن استانداردهای موجود، کل باند فرا پهن (UWB) را پوشش دهد. به‌ این منظور‌ پارامترهای اصلی طراحی نظیر نویز، بهره، تطبیق ورودی و سطوح جریان و ولتاژ بر اساس استانداردهای موجود در باند فرکانسی GHz 1/3 الی GHz 6/10 تعیین می شود. مدار پیشنهادی دارای ساختار تفاضلی گیت مشترک با بهره‌ گیری از دو تکنیک افزایش ترارسانایی و استفاده مجدد از جریان است. با استفاده از این دو تکنیک در تقویت کننده کم نویز پیشنهادی در تکنولوژی m CMOSμ 18/0 TSMC ، توان مصرفی نسبت به سایر روش ها کاهش قابل ملاحظه‌ای یافت. علاوه بر این، عدد نویز حدود dB8/1، بهره مسطح dB8/12 الی dB6/13، خطینگی (IIP3) dBm7- و ضریب انعکاس ورودی کمتر از dB10- حاصل شد.

کلیدواژه‌ها

موضوعات

طراحی مدارهای RFIC

عنوان مقاله [English]

A Fully Differential Ultra Wideband Common-Gate Low Noise Amplifier‌

نویسندگان [English]

naser salehi ¹
Mehdi Bekrani ²
Hadi Zayyani ³
mohammad mehdi taskhiri ³

¹ Faculty of electrical and computer engineering, Qom university of technology, Qom

³ Faculty of electrical and computer engineering, Qom University of Technology

چکیده [English]

Along with increasing in the number of telecommunication standards, the demand for multi-standard transmitters / receivers has been raised. The aim of this paper is to design and simulate an LNA that covers the full band of UWB and involve the available standards as well. Accordingly, the main design parameters including noise, gain, input matching, current level, and voltage level are determined so as to achieve an effective operation in the band of 3.1 GHz to 10.6 GHz. The proposed structure is a differential common-gate associated with the gain-boosting and current-reused techniques. Applying the proposed common-gate structure in the LNA in CMOS 0.18μm technology, the power consumption achieves a considerable reduction compared to other LNA counterparts. In addition, the noise figure is reduced to 1.8dB with a gain of 12.8 dB to 13.6 dB, a linearity of -7dBm is achieved, and the input reflection coefficient is reduced to less than -10 dB.

کلیدواژه‌ها [English]

Low noise amplifier
Ultra wideband
Current reuse
Gain boosting
Capacitors cross coupled

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