طراحی و شبیه‌سازی تقویت‌کننده‌های توزیع شده شبه‌تفاضلی آبشاری به‌منظور افزایش بهره در پهنای باند

نوع مقاله : مقاله پژوهشی

نویسندگان

1 دانشجوی دکتری برق الکترونیک، دانشگاه آزاد اسلامی واحد اراک

2 عضو هیات علمی گروه الکترونیک دانشکده مهندسی برق و کامپیوتر، دانشگاه ازاد اسلامی واحد علوم و تحقیقات

3 استادیار دانشکده مهندسی، دانشگاه ازاد اسلامی واحد اراک

چکیده

تقویت‌کننده توزیع‌شده شبه‌تفاضلی (PDDA) یک روش مناسب برای افزایش پهنای باند در یک تقویت‌کننده باند پهن می‌باشد. در این مقاله روش‌های افزایش بهره PDDA توسط روش‌های آبشاری و حصول تقویت‌کننده توزیع‌شده شبه‌تفاضلی آبشاری (CPDDA)در طرح‌های مختلف، با شرط توان و سطح تراشه ثابت، پیشنهاد شده که انتخاب طرح بهینه وابسته به پارامتر gmRo سلول‌های بهره (PDA) است. جهت بررسی عملکردی و مقایسه طرح‌ها، مدارات پیشنهادی در تکنولوژی RF_CMOS_ 0.18µm طراحی و در نرم‌افزار کیدنس شبیه‌سازی شده است. نتایج شبیه‌سازی نشان می‌دهند که در این تکنولوژی، برای به‌دست آوردن پهنای باند 0-40GHzکه نیاز به gmهای پایین ترانزیستورهای سلول بهره PDA است، تقویت‌کننده با ساختار دو PDDA سه طبقه بهتر از ساختار سه PDDA دو طبقه عمل کرده و با آن می‌توان به بهره 10dB دست یافت. در این تقویت‌کننده پارامترهای S11,S22,S12 نیز به‌ترتیب -12,-10,-16 dB بوده و عدد نویز برابر 4.6dB و P1dB برابر +3.5dBm می‌باشد. این تقویت‌کننده دارای توان مصرفی 230mW است و سطح تراشه 0.63mm2 می‌باشد. مقایسه این تقویت‌کننده با کارهای انجام ‌شده قبلی، گواه عملکرد و کارایی مطلوب این تقویت‌کننده در کاربردهای باند پهن می‌باشد.

کلیدواژه‌ها

موضوعات


عنوان مقاله [English]

Design, Analysis and Simulation of Cascaded Pseudo Differential Distributed Amplifier to Gain-Bandwidth Enhancement

نویسندگان [English]

  • Majid Babaeinik 1
  • Massoud Dousti 2
  • Mohammad Tavakoli 3
1 Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
2 Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
3 Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
چکیده [English]

Pseudo-differential distributed amplifier (PDDA) is an effective method in increasing the bandwidth of a broadband amplifier. This study investigates different methods with same power consumption and chip area for enhancement gain-bandwidth in a cascaded pseudo differential distributed amplifier (CPDDA) and compare them.The choice of optimal design depends on the gmRo parameter of the PDA cells. The proposed circuits have been implemented in 0.18-μm RF-CMOS technology. The simulation results show that in this technology, in order to obtain a 0-40GHz bandwidth that requires low gmof the PDA's cell-transistor, two cascaded PDDA with three stages has a better performance than a three cascaded PDDA with two stages. In two cascaded PDDA with three stages structure, a gain of 10dB can be achieved in the bandwidth of 40GHz in 0.18-μm RF-CMOS technology. In this amplifier, parameters S11, S22, S12, are -12, -10, and -16 dB, respectively and noise figure is equal to 4.6 and P1dB is +3.5dBm. This amplifier has 230mW power consumption and a chip area of 0.63 mm2. These values show the good performance of the proposed amplifier, compared to the results of previous works on similar amplifiers.

کلیدواژه‌ها [English]

  • Ultra-wideband Amplifier
  • Distributed Amplifier (DA)
  • Cascaded Pseudo Differential Distributed Amplifier (CPDDA)
  • Bandwidth (BW)
  • S Parameters
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