نوع مقاله : مقاله پژوهشی
نویسندگان
1 دانشجوی دکتری -مهندسی برق الکترونیک-دانشکده برق و کامپیوتر-دانشگاه تربیت مدرس -تهران-ایران
2 دانشیار و عضو هیئت علمی دانشکده مهندسی برق، دانشگاه صنعتی شریف، تهران، ایران
3 استادیار گروه قطعات فوتونیک مجتمع، دانشگاه فنی درسدن، درسدن،آلمان
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In the paper, we compare two types of systems of Electrical Interconnect (EI) as Near Speed of Light (NSOLT) and Optical Interconnect (OI) on chip for important parameters of delay and power consumption in terms of length interconnection in 22nm CMOS node technology and we obtain critical length for the delay & power consumption parameters. By this comparison, it can be seen that the delay in electrical interconnection system by the near speed of light transmission line method can be less than the optical interconnection, but the power consumption in the optical interconnection on chip at lengths greater than the critical length is less than electrical interconnection even at efficiency power. We also present the best suggestion for optical modulator & photodetector for working on-chip by comparison the different parameters of the types of electro-refractive modulators (carrier injection, carrier depletion) and the types of electro-absorptive modulators as well as comparing the parameters of different types of photodetectors.
کلیدواژهها [English]
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