نویسندگان
1 دانشگاه شاهد، دکتری برق-الکترونیک
2 دانشگاه شاهد، دکترای برق-الکترونیک
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this paper, two new analog switches for very high speed applications are proposed using a body bias control circuit. In addition to using body bias technique, dummy transistor and differential structure is used so that in addition to obtaining a high speed and acceptable precision, the phase and amplitude distortion of proposed switches are quite low in track mode. The difference between the second proposed switch and the first proposed switch is using a smart body bias control circuit, which can greatly reduce non-linear effects. The first and second proposed switches acquire a bandwidth almost three times more than that of simple MOS switch. As simulations reveals these switches can accommodate up to 2.5 GHz clock and 1.25 GHz input frequency with reasonable accuracy. The SFDR at Nyquist frequency for the first and second proposed switches in comparison with the simple MOS switch are 65 dB and 69 dB and 45 dB respectively, indicating that the proposed switches are more linear than simple MOS switch.
کلیدواژهها [English]
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