نویسندگان
1 دانشگاه آزاد اسلامی واحد رشت، کتری برق
2 دانشجوی کارشناسی ارشد الکترونیک، موسسه آموزش عالی مهرآستان، آستانه
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this paper, we simulate junctionless tunnel field effect transistor (JLTFET) by Silvaco Atlas. Two devices which utilize double material gate (DMG) and heterostructure (H) ideas are simulated and investigated. We propose double material gate hetero-structure JLTFET (DMG-H-JLTFET) using these two ideas. These devices have discussed at ON and OFF state with energy band diagram. Simulation results show that DMG-H-JLTFET has a larger ON current, a smaller subthreshold slope, a larger ION/IOFF and smaller threshold voltage as compared with other devices. Furthermore, we calculated the transconductance and the cut-off frequency with respect to gate voltage for these devices, which indicates that performance of proposed device is superior. Hence, DMG-H-JLTFET is suitable for analog and digital applications.
کلیدواژهها [English]
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