In this paper, we are introducing a bias-less THz pulsed emitter. The presented emitter consists of asymmetric Schottky contacts on Low Temperature Grown (LTG)-GaAs layer, inducing an internal electric field. By radiating a short Gaussian pulse with the wavelength of 800 nm, carriers are generated in the active area of the device. Sharp edge transitions in the incident laser pulse is responsible for generating high frequencies in the resulted current. The resulted time varying current generates the THz radiation toward the bottom of the device. Applying the proposed pulsed emitter can lead to high output THz powers, owing to reduced thermal issues and possible using of higher input laser power, comparing with continues wave THz emitters. Moreover, benefiting from short input laser pulses, high frequency output components can be generated, which results in enhanced output bandwidth. 2D finite element method simulations have been used for the presented results in this article.
Torkaman, P., Mohamad-Zamani, M. J. (2018). 'Simulation of pulsed THz photoconductive emitters with dis-similar Schottky barriers', Electronics Industries, 9(2), pp. 51-58.
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Torkaman, P., Mohamad-Zamani, M. J. Simulation of pulsed THz photoconductive emitters with dis-similar Schottky barriers. Electronics Industries, 2018; 9(2): 51-58.
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