In this paper, we have investigated GaN/AlGaN Modified Quantum Dot (MQD) nanocrystal and GaN/AlGaN/GaN/AlGaN Quantum Dot- Quantum Well (QDQW) heteronanocrystal which has been analyzed by the Finite Element Numerical Methods (FEM). Simulations carried out for state n=1, l=0, and m=0 which are original, orbital, and magnetic state of quantum numbers. The effects of variation of radius layers such as total radius, GaN core, shell, and AlGaN barriers radius on the wavelength and emission coefficient are studied. Furthermore, window of 330-410nm wavelength detected by these structures, provides us facility to detect the light of UV solidstate lasers that are in 349, 351, 355 and 375nm wave length. These suggested structures can be used for medicine, telecommunications and computing (optical storages).
Ebrahimi, A., Ranaaie, H., Elyasi, P., & Solman, A. (2011). Design and Simulation of Long Wave-UV Photo-detector with Different GaN/AlGaN Quantum Nanocrystal Structures. Electronics Industries, 2(3), 53-64.
MLA
Asghar Ebrahimi; Hosein Ranaaie; Payam Elyasi; Ahmad Solman. "Design and Simulation of Long Wave-UV Photo-detector with Different GaN/AlGaN Quantum Nanocrystal Structures". Electronics Industries, 2, 3, 2011, 53-64.
HARVARD
Ebrahimi, A., Ranaaie, H., Elyasi, P., Solman, A. (2011). 'Design and Simulation of Long Wave-UV Photo-detector with Different GaN/AlGaN Quantum Nanocrystal Structures', Electronics Industries, 2(3), pp. 53-64.
VANCOUVER
Ebrahimi, A., Ranaaie, H., Elyasi, P., Solman, A. Design and Simulation of Long Wave-UV Photo-detector with Different GaN/AlGaN Quantum Nanocrystal Structures. Electronics Industries, 2011; 2(3): 53-64.
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