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Electrical & Electronics Engineering , Faculty of Engineering, University of Zanjan, Zanjan, Iran
Abstract
In this paper, a high-bandwidth low-noise amplifier using gm-Boosting technique and noise cancellation method is presented. In this design, the common gate and input auxiliary amplifier are used in the input stage as the gm-Boosting, and the second stage is used to improve the gain and eliminate noise. This amplifier is designed with a 0.18μm CMOS technology, simulation results illustrate the voltage gain of 17.5 ± 1.5 dB at 2.2 to 12.2 GHz bandwidth, s11
kiamehr, M., & yargholi, M. (2020). Design of low power LNA by gm-boosting Technique for Ultra Wide band applications. Electronics Industries, 11(3), 61-70.
MLA
mehdi kiamehr; mostafa yargholi. "Design of low power LNA by gm-boosting Technique for Ultra Wide band applications". Electronics Industries, 11, 3, 2020, 61-70.
HARVARD
kiamehr, M., yargholi, M. (2020). 'Design of low power LNA by gm-boosting Technique for Ultra Wide band applications', Electronics Industries, 11(3), pp. 61-70.
VANCOUVER
kiamehr, M., yargholi, M. Design of low power LNA by gm-boosting Technique for Ultra Wide band applications. Electronics Industries, 2020; 11(3): 61-70.
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