Survey & Comparison of the Parameters of Optical Interconnects & Electrical Interconnections in Modulators & Photodetectors on chip

Document Type : Original Article

Authors

1 PhD student- ِDepartment of Electrical and Computer Engineering- Tarbiat Modares University-Tehran-Iran

2 Associate Professor, Department of Electrical Engineering, Sharif University of Technology,Tehran,Iran

3 Junior Professor Integrated Photonic Devices Group, TU Dresden, Dresden,Germany

Abstract

In the paper, we compare two types of systems of Electrical Interconnect (EI) as Near Speed of Light (NSOLT) and Optical Interconnect (OI) on chip for important parameters of delay and power consumption in terms of length interconnection in 22nm CMOS node technology and we obtain critical length for the delay & power consumption parameters. By this comparison, it can be seen that the delay in electrical interconnection system by the near speed of light transmission line method can be less than the optical interconnection, but the power consumption in the optical interconnection on chip at lengths greater than the critical length is less than electrical interconnection even at efficiency power. We also present the best suggestion for optical modulator & photodetector for working on-chip by comparison the different parameters of the types of electro-refractive modulators (carrier injection, carrier depletion) and the types of electro-absorptive modulators as well as comparing the parameters of different types of photodetectors.

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History

  • Receive Date: 09 May 2020
  • Revise Date: 07 September 2020
  • Accept Date: 04 November 2020
  • First Publish Date: 21 April 2021

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