Department of Electronics, School of Electrical engineering, IUST
Abstract
This paper presents a new ultra low power CMOS Ultra Wide Band (UWB) mixer. To reduce the supply voltage and the power consumption, the bulk injection technique is used. Adopting PMOS transistors in the mixer core enhances the noise due to bulk injection topology. On the other hand, to increase the conversion gain, we use a gm-boosting buffer in the IF stage of our design. To achieve an ultra-low power circuit, the transistors in the mixer core are biased in weak inversion region. The proposed circuit is designed and simulated in TSMC 0.18um CMOS technology. Then, the layout is designed and the post-layout simulations are performed using the foundry design kit. The post-layout simulation results revels maximum conversion gain of 10.9 dB, minimum noise figure of 13.9 dB and IIP3 if 4 dBm, with 2dBm LO power, in 3~11 GHz band. The port to port isolation is better than 43 dB. The total power consumption is 214 uW with 1V supply.
یاوند حسنی, ., & Gholami, K. (2021). Design and Simulation of an UWB Ultra Low Power Inductor-Less Mixer Using Bulk Injection Technique. Electronics Industries, 12(3), 31-40.
MLA
جواد یاوند حسنی; Keivan Gholami. "Design and Simulation of an UWB Ultra Low Power Inductor-Less Mixer Using Bulk Injection Technique". Electronics Industries, 12, 3, 2021, 31-40.
HARVARD
یاوند حسنی, ., Gholami, K. (2021). 'Design and Simulation of an UWB Ultra Low Power Inductor-Less Mixer Using Bulk Injection Technique', Electronics Industries, 12(3), pp. 31-40.
VANCOUVER
یاوند حسنی, ., Gholami, K. Design and Simulation of an UWB Ultra Low Power Inductor-Less Mixer Using Bulk Injection Technique. Electronics Industries, 2021; 12(3): 31-40.
)