Junctionless field effect transistors (JL-FETs) are novel structures which have simplified the fabrication process and have appropriate electronic characteristics. By applying junctionless concept to Carbon nanotube field effect transistors (CNTFETs), we have investigated the electronic characteristics of a JL-CNTFET, and compared its characteristics to a conventional CNTFET. Electronic parameters such as subthreshold swing, Ion/Ioff ratio and output characteristic are simulated for both JL-CNTFET and C-CNTFET. Sensitivity of Ion/Ioff ratio to CNT’s chirality and doping density of channel also are investigated. We have simulated the JL-CNTFET structure using the self-consistent solution of Poisson–Schr?dinger equations, within the non-equilibrium Green’s function (NEGF) formalism.
شاه حسینی, ., & بربستگان, . (2014). Simulation of Junctionless Carbon Nanotube Field Effect Transistor Using Non-equilibrium Green’s Function Formalism. Electronics Industries, 5(2), 5-10.
MLA
علی شاه حسینی; صابر بربستگان. "Simulation of Junctionless Carbon Nanotube Field Effect Transistor Using Non-equilibrium Green’s Function Formalism". Electronics Industries, 5, 2, 2014, 5-10.
HARVARD
شاه حسینی, ., بربستگان, . (2014). 'Simulation of Junctionless Carbon Nanotube Field Effect Transistor Using Non-equilibrium Green’s Function Formalism', Electronics Industries, 5(2), pp. 5-10.
VANCOUVER
شاه حسینی, ., بربستگان, . Simulation of Junctionless Carbon Nanotube Field Effect Transistor Using Non-equilibrium Green’s Function Formalism. Electronics Industries, 2014; 5(2): 5-10.
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