In this paper a bandgap voltage reference(BVR) with MOSFET transistors in strong inversion region is presented. The proposed circuit has high PSRR and low temperature sensitivity. In this design PSRR is enhanced by using a feedback loop and a regulated voltage for the core of BVR. The proposed bandgap voltage reference, simulated in a 0.18µm CMOS technology, exhibits the output voltage and temperature coefficient in the temperature range of -20 to 100 °c equal to 466.7 mV and 29.1ppm⁄(°c), respectively. The PSRR at lower frequencies is 109 dB. This circuit dissipates 42 μW from 1.2 supply voltage at room temperature.
علی زاده, . ., & شمسی, . (2014). Design of a High PSRR Bandgap Voltage Reference by Using MOSFETs in Stronge Inversion Region. Electronics Industries, 5(4), 29-40.
MLA
محمد کریم علی زاده; حسین شمسی. "Design of a High PSRR Bandgap Voltage Reference by Using MOSFETs in Stronge Inversion Region". Electronics Industries, 5, 4, 2014, 29-40.
HARVARD
علی زاده, . ., شمسی, . (2014). 'Design of a High PSRR Bandgap Voltage Reference by Using MOSFETs in Stronge Inversion Region', Electronics Industries, 5(4), pp. 29-40.
VANCOUVER
علی زاده, . ., شمسی, . Design of a High PSRR Bandgap Voltage Reference by Using MOSFETs in Stronge Inversion Region. Electronics Industries, 2014; 5(4): 29-40.
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