This paper presents a CMOS ultra-wideband (UWB) gm-boosted common-gate low noise amplifier (LNA) based on an active inductor to improve the noise specification and area consumption of the circuit. A common-source stage used in the feedback path boosts the gm of the LNA. Furthermore, the large, passive, on-chip inductor needed for the LNA design is replaced by an active inductor which decreases the chip area, significantly. The proposed structure is designed and simulated in a 0.18 µm standard CMOS process. The results reveal that the proposed LNA has reached to a flat forward gain (S21) of 11.85±0.85 dB, reverse isolation (S12) of less than -56.1 dB, input reverse loss (S11) of less than -9.64 dB, and noise figure (NF) of 4.6-4.9 dB over the entire frequency band of 3.1-10.6 GHz, while the total power dissipation for a 1.8 V supply voltage is 13.6 mW.
صابرکاری, ., & کاظمی, . (2015). Design of a gm-boosted Low Noise Amplifier Based on Active Inductor for Ultra-Wideband Aplications. Electronics Industries, 6(1), 45-56.
MLA
علیرضا صابرکاری; شیما کاظمی. "Design of a gm-boosted Low Noise Amplifier Based on Active Inductor for Ultra-Wideband Aplications". Electronics Industries, 6, 1, 2015, 45-56.
HARVARD
صابرکاری, ., کاظمی, . (2015). 'Design of a gm-boosted Low Noise Amplifier Based on Active Inductor for Ultra-Wideband Aplications', Electronics Industries, 6(1), pp. 45-56.
VANCOUVER
صابرکاری, ., کاظمی, . Design of a gm-boosted Low Noise Amplifier Based on Active Inductor for Ultra-Wideband Aplications. Electronics Industries, 2015; 6(1): 45-56.
)