In this paper, we have simulated and investigated the conductance and electron transport of telescoping double-walled carbon nanotubes (TDWCNTs) with and without vacancy defect, using tight-binding model combined with nonequilibrium Green’s function (NEGF) approach. The simulation results show that the relative motion of the walls along the tube axis causes periodic valleys and peaks in electrical conductance. Each of these valleys and peaks can be considered as low (OFF) and high (ON) conductance respectively. As a result, TDWCNT device can be used as a nanoswitch in nanoelectromechanical systems (NEMS). In addition, our results show that introduction of a vacancy defect decreases the conductance by 50%. Reduction of the conductance depends on the location and density of the defect. If the density of the defect is low in the structure, the conductance of the device is not much affected. Therefore, the defective device can be still used as a nanoswitch because of nearly constant ON/OFF conductance ratio. If the density of the defect is high, the conductance is significantly affected and the performance of the device as a nanoswitch is degraded.
Shahhoseini, A., & Aghabararian, E. (2015). Nanoswitch based on telescoping double-walled carbon nanotubes and the effect of vacancy defect on its electrical performance. Electronics Industries, 6(4), 13-20.
MLA
Ali Shahhoseini; Ebrahim Aghabararian. "Nanoswitch based on telescoping double-walled carbon nanotubes and the effect of vacancy defect on its electrical performance". Electronics Industries, 6, 4, 2015, 13-20.
HARVARD
Shahhoseini, A., Aghabararian, E. (2015). 'Nanoswitch based on telescoping double-walled carbon nanotubes and the effect of vacancy defect on its electrical performance', Electronics Industries, 6(4), pp. 13-20.
VANCOUVER
Shahhoseini, A., Aghabararian, E. Nanoswitch based on telescoping double-walled carbon nanotubes and the effect of vacancy defect on its electrical performance. Electronics Industries, 2015; 6(4): 13-20.
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