نویسندگان
1 کارشناسی ارشد
2 استادیار دانشکده برق دانشگاه خواجه نصیر الدین طوسی
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this paper a bandgap voltage reference(BVR) with MOSFET transistors in strong inversion region is presented. The proposed circuit has high PSRR and low temperature sensitivity. In this design PSRR is enhanced by using a feedback loop and a regulated voltage for the core of BVR. The proposed bandgap voltage reference, simulated in a 0.18µm CMOS technology, exhibits the output voltage and temperature coefficient in the temperature range of -20 to 100 °c equal to 466.7 mV and 29.1ppm⁄(°c), respectively. The PSRR at lower frequencies is 109 dB. This circuit dissipates 42 μW from 1.2 supply voltage at room temperature.
کلیدواژهها [English]
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