نویسندگان
1 دانشگاه گیلان-دکتری تخصصی
2 دانشگاه گیلان، کارشناسی ارشد
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
This paper presents a CMOS ultra-wideband (UWB) gm-boosted common-gate low noise amplifier (LNA) based on an active inductor to improve the noise specification and area consumption of the circuit. A common-source stage used in the feedback path boosts the gm of the LNA. Furthermore, the large, passive, on-chip inductor needed for the LNA design is replaced by an active inductor which decreases the chip area, significantly. The proposed structure is designed and simulated in a 0.18 µm standard CMOS process. The results reveal that the proposed LNA has reached to a flat forward gain (S21) of 11.85±0.85 dB, reverse isolation (S12) of less than -56.1 dB, input reverse loss (S11) of less than -9.64 dB, and noise figure (NF) of 4.6-4.9 dB over the entire frequency band of 3.1-10.6 GHz, while the total power dissipation for a 1.8 V supply voltage is 13.6 mW.
کلیدواژهها [English]
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